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TC58NS512ADC 2003-03-05 1/43 x power supply v cc 3.3 v r 0.3 v x program/erase cycles 1e5 cycle (with ecc) x access time cell array to register 25 p s max serial read cycle 50 ns min x operating current read (50 ns cycle) 10 ma typ. program (avg.) 10 ma typ. erase (avg.) 10 ma typ. standby 50 p a max. x package fdc-22a (weight: 1.8 g typ.) tentative toshiba mos digital integrated circuit silicon gate cmos 512-mbit (64m u 8 bits) cmos nand e 2 prom (64m byte smartmedia tm ) description the tc58ns512a is a single 3.3-v 512-mbit (553,648,128) bit nand electrically erasable and programmable read-only memory (nand e 2 prom) organized as 528 bytes u 32 pages u 4096 blocks. the device has a 528-byte static register which allows program and read data to be transferred between th e register and the memory cell array in 528-byte increments. the eras e operation is implemented in a single block unit (16 kbytes 512 bytes: 528 bytes u 32 pages). the tc58ns512a is a serial-type memory device which utilizes the i/o pins for both address and data input/output as well as for command inputs. the eras e and program operations are automatically executed. the tc58ns512dc is a smartmedia tm with id and each device has 128 bi t unique id number embedded in the device. this unique id number is applicable to image files, mu sic files, electronic books, and so on where copyright protection is required. the data stored in the TC58NS512ADC needs to comply with the data format standard ized by the ssfdc forum in order to maintain compatibility with other smartmedia tm systems. features x organization memory cell allay 528 u 128k u 8 register 528 u 8 page size 528 bytes block size (16k 512) bytes x modes read, reset, auto page program, auto block erase, status read, x mode control serial input/output, command control x complies with the smartmedia tm electrical specification and data format specification issued by the ssfdc forum pin assignment (top view) pin names i/o1 to i/o8 i/o port ce chip enable we write enable re read enable cle command latch enable ale address latch enable wp write protect by / ry ready/busy gnd ground input lvd low voltage detect v cc power supply v ss ground tm is a trademark of toshiba corporation. v ss cle ale i/o1 i/o2 i/o3 i/o4 v ss v ss by / ry v cc gnd lvd i/o8 i/o7 i/o6 i/o5 v cc we wp ce re 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 x toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in ge neral can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibi lity of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to a void situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage t o property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling gui de for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. x the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfun ction o r failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy con trol instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this docume nt shall be made at the customer?s own risk. 000707eba2
TC58NS512ADC 2003-03-05 2/43 block diagram absolute maximum ratings symbol rating value unit v cc power supply voltage 0.6 to 4.6 v v in input voltage 0.6 to 4.6 v v i/o input/output voltage 0.6 v to v cc 0.3 v ( d 4.6 v) v p d power dissipation 0.3 w t stg storage temperature 20 to 65 c t opr operating temperature 0 to 55 c capacitance * (ta 25c, f 1 mhz) symb0l parameter condition min max unit c in input v in 0 v 10 pf c out output v out 0 v 12 pf * this parameter is periodically sampled and is not tested for every device. i/o control circuit status register address register command register column buffer column decoder data register sense amp memory cell array control hv generator row address decoder logic control by / ry v cc i/o1 v ss i/o8 to wp ce cle ale we re by / ry row address buffer decoder x the products described in this document are subject to the foreign exchange and foreign trade laws. x the information contained herein is presented only as a guide for the applications of our products. no responsibility is assume d b y toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from i ts use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation o r others. x the information contained herein is subject to change without notice. 000707eba2
TC58NS512ADC 2003-03-05 3/43 valid blocks (1) symbol parameter min typ. max unit n vb number of valid blocks 4016 4096 blocks (1) the tc58ns512a occasionally contains unusable blocks. refer to application note (14) toward the end of this document. recommended dc operating conditions symbol parameter min typ. max unit v cc power supply voltage 3.0 3.3 3.6 v v ih high level input voltage 2.0 v cc 0.3 v v il low level input voltage 0.3 * 0.8 v * 2 v (pulse width lower than 20 ns) dc characteristics (ta 0 to 55c, v cc 3.3 v r 0.3 v) symbol parameter condition min typ. max unit i il input leakage current v in 0 v to v cc r 10 p a i lo output leakage current v out 0 v to v cc r 10 p a i cco1 operating current (serial read) ce v il , i out 0 ma, t cycle 50 ns 10 30 ma i cco3 operating current (command input) t cycle 50 ns 10 30 ma i cco4 operating current (data input) t cycle 50 ns 10 30 ma i cco5 operating current (address input) t cycle 50 ns 10 30 ma i cco7 programming current 10 30 ma i cco8 erasing current 10 30 ma i ccs1 standby current ce v ih, wp 0v/v cc 1 ma i ccs2 standby current ce v cc 0.2 v , wp 0v/v cc 10 50 p a v oh high level output voltage i oh 400 p a 2.4 v v ol low level output voltage i ol 2.1 ma 0.4 v i ol ( by / ry ) output current of by / ry pin v ol 0.4 v 8 ma
TC58NS512ADC 2003-03-05 4/43 ac characteristics and recommended operating conditions (ta 0 to 55c, v cc 3.3 v r 0.3 v) symbol parameter min max unit notes t cls cle setup time 0 ns t clh cle hold time 10 ns t cs ce setup time 0 ns t ch ce hold time 10 ns t wp write pulse width 25 ns t als ale setup time 0 ns t alh ale hold time 10 ns t ds data setup time 20 ns t dh data hold time 10 ns t wc write cycle time 50 ns t wh we high hold time 15 ns t ww wp high to we low 100 ns t rr ready to re falling edge 20 ns t rp read pulse width 35 ns t rc read cycle time 50 ns t rea re access time (serial data access) 35 ns t cea ce access time (serial data access, id read) 45 ns t alea ale access time (id read) 45 ns t ceh ce high time for last address in serial read cycle 100 ns (2) t reaid re access time (id read) 35 ns t oh data output hold time 10 ns t rhz re high to output high impedance 30 ns t chz ce high to output high impedance 20 ns t reh re high hold time 15 ns t ir output-high-impedance-to- re falling edge 0 ns t rsto re access time (status read) 35 ns t csto ce access time (status read) 45 ns t rhw re high to we low 0 ns t whc we high to ce low 30 ns t whr we high to re low 30 ns t r memory cell array to starting address 25 p s t wb we high to busy 200 ns t ar2 ale low to re low (read cycle) 50 ns t rb re last clock rising edge to busy (in sequential read) 200 ns t cry ce high to ready (when interrupted by ce in read mode) 1 t r ( by / ry ) p s (1) (2) t rst device reset time (read/program/erase) 6/10/500 p s ac test conditions parameter condition input level 2.4 v, 0.4 v input pulse rise and fall time 3 ns input comparison level 1.5 v, 1.5 v output data comparison level 1.5 v, 1.5 v output load c l (100 pf) 1 ttl
TC58NS512ADC 2003-03-05 5/43 note: (1) ce high to ready time depends on the pull-up resistor tied to the by / ry pin. (refer to application note (9) toward the end of this document.) (2) sequential read is terminated when t ceh is greater than or equal to 100 ns. if the re to ce delay is less than 30 ns, by / ry signal stays ready. programming and erasing characteristics (ta 0 to 55c, v cc 3.3 v r 0.3 v) symbol parameter min typ. max unit notes t prog programming time 200 1000 p s t dbsy dummy busy time for multi block programming 2 10 p s t mbpbsy multi block program busy time 200 1000 p s n number of programming cycles on same page 3 (1) t berase block erasing time 2 10 ms (1): refer to application note (12) toward the end of this document. : 0 to 30 ns o busy signal is not output. a ce re t ceh t 100 ns * 525 busy by / ry * : v ih or v il a 526 527 t cry
TC58NS512ADC 2003-03-05 6/43 timing diagrams latch timing diagram for command/address/data command input cycle timing diagram cle ale ce re we hold time t dh setup time t ds i/o1 to i/o8 : v ih or v il t cs t dh t ds t als t alh t wp t cls t ch t clh : v ih or v il ce cle we ale i/o1 to i/o8
TC58NS512ADC 2003-03-05 7/43 address input cycle timing diagram data input cycle timing diagram : v ih or v il we t wp t wp t wh t wp t als t wc t dh t ds d in 0 d in 1 t clh t ch ale cle ce i/o1 to i/o8 d in 527 t dh t ds t dh t ds t cs t dh t ds : v ih or v il t dh t ds t cls cle t als t wp t alh t wh t wp t wh t wp a0 to a7 t dh t ds a9 to a16 a17 to a24 t cs t wc t wc ce we ale i/o1 to i/o8 t wc t wh t wp t dh t ds a25
TC58NS512ADC 2003-03-05 8/43 serial read cycle timing diagram status read cycle timing diagram t whr we t dh t ds t cls t cls t cs t clh t ch t wp status output 70h * t whc t csto t ir t rsto t rhz t chz ce cle re by / ry i/o1 to i/o8 : v ih or v il t oh * 70h represents the hexadecimal number t reh t chz ce t rhz t rea t rc t rr t rhz t rea t rhz t rea re by / ry i/o1 to i/o8 t oh t oh t oh t rp t rp t rp
TC58NS512ADC 2003-03-05 9/43 read cycle (1) timing diagram read cycle (1) timing diagram: when interrupted by ce a25 a17 to a24 00h a9 to a16 i/o1 to i/o8 t cs t cls t clh t ch d out n d out n 1 d out 527 t dh t ds t wc t als t alh t alh t r t ar2 t rr t rc t rea t wb t rb t cry t ceh we cle ce ale re : v ih or v il t dh t ds t dh t ds t dh t ds d out n 2 column address n * by / ry t dh t ds a25 a17 to a24 00h a9 to a16 a0 to a7 i/o1 to i/o8 t cs t cls t clh d out n d out n 1 t dh t ds t wc t als t alh t alh t r t ar2 t rr t rc t rea t wb we cle ce ale re : v ih or v il t dh t ds t dh t ds t dh d out n 2 column address n * by / ry t dh t ds * : read operation using 00h command n: 0 to 255 t chz t rhz t oh t ch
TC58NS512ADC 2003-03-05 10/43 read cycle (2) timing diagram read cycle (3) timing diagram a0 to a7 a9 to a16 01h t cs t cls t clh t ch d out t als t alh t alh t ar2 t rc t rea t wb we cle ce ale re by / ry column address n * d out d out t r t rr t dh t ds 256 n 256 n 1 i/o1 to i/o8 : v ih or v il t dh t ds 527 * : read operation using 01h command n: 0 to 255 a17 to a24 a25 a0 to a7 a9 to a16 50h t cs t cls t clh t ch d out t als t alh t alh t ar2 t rc t rea t wb we cle ce ale re by / ry column address n * d out d out t r t rr t dh t ds 512 n 512 n 1 i/o1 to i/o8 : v ih or v il t dh t ds 527 * : read operation using 50h command n: 0 to 15 a17 to a24 a25
TC58NS512ADC 2003-03-05 11/43 sequential read (1) timing diagram sequential read (2) timing diagram 00h t r we cle ce ale re by / ry column address n n n 1 n 2 527 527 t r 0 1 2 page address m page m access page m 1 access : v ih or v il i/o1 to i/o8 a0 to a7 a9 to a16 a17 to a24 a25 256 n 256 n 1 256 n 2 01h t r we cle ce ale re by / ry column address n 527 527 t r 0 1 2 page address m page m access page m 1 access : v ih or v il i/o1 to i/o8 a0 to a7 a9 to a16 a17 to a24 a25
TC58NS512ADC 2003-03-05 12/43 sequential read (3) timing diagram 512 513 514 512 n 512 n 1 512 n 2 50h t r we cle ce ale re by / ry column address n 527 527 t r page address m page m access page m 1 access : v ih or v il i/o1 to i/o8 a0 to a7 a9 to a16 a17 to a24 a25
TC58NS512ADC 2003-03-05 13/43 auto-program operation timing diagram auto block erase timing diagram a9 to a16 60h we cle ce ale re by / ry : v ih or v il t cs t cls t clh t cls t ds t dh : do not input data while data is being output. d0h 70h t wb t berase busy status read command erase start command auto block erase setup command i/o1 to i/o8 status output a17 to a24 a25 t als t alh 80h t ch t alh t als a9 to a16 a0 to a7 t dh we cle ce ale re by / ry t prog : v ih or v il t cs t cls t clh t cs t cls d in 0 status output d in 527 d in 1 t wb t ds t ds t dh t alh t als t ds t dh : do not input data while data is being output. i/o1 to i/o8 t ds t dh a17 to a24 a25 10h 70h
TC58NS512ADC 2003-03-05 14/43 multi block programming timing (to be continued) 80h we cle ce ale re by / ry t dbsy : v ih or v il t cs t cls t clh t ch t cs t cls a0 to a7 d in 0 d in 1 t wb t als t alh t alh t als 11h i/o1 to /o8 t ds t dh d in 527 a9 to a16 a17 to a24 t ds t dh 80h a25 a0 to a7 auto program (dummy) t ds t dh 2 max 3 times repeat 31 times repeat (page 0 to 30 programming in multi block) max 4 blocks programming last district input 1
TC58NS512ADC 2003-03-05 15/43 (continuation 1) multi block programming timing 80h we cle ce ale re by / ry t mbpbsy : v ih or v il t cls t clh t ch t cs t cls a0 to a7 d in 0 d in 1 t wb t als t alh t alh t als 15h i/o1 to i/o8 t ds t dh d in 527 2 a9 to a16 a17 to a24 t ds t dh 80h a25 a0 to a7 auto program (multi block program) t ds t dh last district input 31 times repeat (page 0 to 30 programming in multi block) max 4 blocks programming max 3 times repeat : do not input data while data is being output. max 3 times repeat 3
TC58NS512ADC 2003-03-05 16/43 (continuation 2) multi block programming timing 80h we cle ce ale re by / ry t dbsy : v ih or v il t cs t cls t clh t ch t cs t cls a0 to a7 d in 0 d in 1 t wb t als t alh t alh t als 11h i/o1 to i/o8 t ds t dh d in 527 a9 to a16 a17 to a24 t ds t dh 80h a25 a0 to a7 auto program (dummy) t ds t dh max 3 times repeat (last pages programming in multi block) max 4 blocks programming last district input 3 4 : do not input data while data is being output.
TC58NS512ADC 2003-03-05 17/43 (continuation 3) multi block programming timing 80h we cle ce ale re by / ry t prog : v ih or v il t cls t clh t ch t cs t cls a0 to a7 d in 0 d in 1 t wb t als t alh t alh t als 10h i/o1 to i/o8 t ds t dh d in 527 4 a9 to a16 a17 to a24 t ds t dh 71h a25 auto program (true) t ds t dh last district input max 4 blocks programming : do not input data while data is being output. max 3 times repeat 5 status read (last pages programming in multi block) status output t ds t dh
TC58NS512ADC 2003-03-05 18/43 multi block erase timing diagram 60h a17 to a24 we cle ce ale re by / ry : v ih or v il t cs t cls t clh t cls a9 to a16 t ds t dh t als : do not input data while data is being output. d0h 71h t wb t berase busy status read command erase start command auto block erase setup command i/o1 to i/o8 status output t alh max 4 times repeat a25
TC58NS512ADC 2003-03-05 19/43 id read (1) operation timing diagram id read (2) operation timing diagram t alea : v ih or v il we i/o1 to i/o8 t dh t ds t cls t cs t cls t ch 91h ce cle re t cs t ch t alh t als t alh t cea 00 20h t reaid address input ale : v ih or v il device code t alea we i/o1 to i/o8 t dh t ds t cls t cs t cls t ch maker code ce cle re t cs t ch t alh t als t alh t cea t reaid address input ale option code (1) 98h 76h a5h c0h 00 90h t reaid t reaid option code (2) t reaid
TC58NS512ADC 2003-03-05 20/43 pin functions the device is a serial access memory which utilizes time-sharing input of address information. the device pin-outs are configured as shown in figure 1. command latch enable: cle the cle input signal is used to control loading of the operation mode command into the internal command register. the command is latched into the command register from the i/o port on the rising edge of the we signal while cle is high. address latch enable: ale the ale signal is used to control loading of either address information or input data into the internal address/data register. address information is latched on the rising edge of we if ale is high. input data is latched if ale is low. chip enable: the device goes into a low-power standby mode when ce goes high during a read operation. the ce signal is ignored when device is in busy state ( by / ry l), such as during a program or erase operation, and will not enter standby mode even if the ce input goes high. the ce signal must stay low during the read mode busy state to ensure that memory array data is correctly transf erred to the data register. write enable: the we signal is used to control the acquisition of data from the i/o port. read enable: the re signal controls serial data output. data is available t rea after the falling edge of re . the internal column address counter is also incremented (address address l) on this falling edge. i/o port: i/o1 to 8 the i/o1 to 8 pins are used as a port for transferring address, command and input/output data to and from the device. write protect: the wp signal is used to protect the device from accidental programming or erasing. the internal voltage regulator is reset when wp is low. this signal is usually used for protecting the data during the power-on/off sequence when input signals are invalid. ready/busy: the by / ry output signal is used to indicate the operating condition of the device. the by / ry signal is in busy state ( by / ry l) during the program, erase and read operations and will return to ready state ( by / ry h) after completion of the operation. the output buffer for this signal is an open drain. low voltage detect: lvd the lvd signal is used to detect the power supply voltage level. ce we re wp by / ry v ss cle ale i/o1 i/o2 i/o3 i/o4 v ss v ss 1 2 3 4 5 6 7 8 9 10 11 by / ry v cc gnd lvd i/o8 i/o7 i/o6 i/o5 v cc 22 21 20 19 18 17 16 15 14 13 12 we wp ce re figure 1. pinout
TC58NS512ADC 2003-03-05 21/43 schematic cell layout and address assignment the program operation works on page units while the erase operation works on block units. a page consists of 528 bytes in which 512 bytes are used for main memory storage and 16 bytes are for redundancy or for other uses. 1 page 528 bytes 1 block 528 bytes u 32 pages (16k 512) bytes capacity 528 bytes u 32 pages u 4096 blocks an address is read in via the i/o port over four consecutive clock cycles, as shown in table 1. table 1. addressing i/o8 i/o7 i/o6 i/o5 i/o4 i/o3 i/o2 i/o1 first cycle a7 a6 a5 a4 a3 a2 a1 a0 second cycle a16 a15 a14 a13 a12 a11 a10 a9 third cycle a24 a23 a22 a21 a20 a19 a18 a17 fourth cycle * l * l * l * l * l * l * l a25 a0 to a7 : column address a9 to a25 : page address a14 to a25 : block address a9 to a13 : nand address in block * : a8 is automatically set to low or high by a 00h command or a 01h command. * : l/o2 to l/o8 must be set to low in the fourth cycle. operation mode: logic and command tables the operation modes such as program, erase, read an d reset are controlled by the fourteen different command operations shown in table 3. address input, command input and data input/output are controlled by the cle, ale, ce , we , re and wp signals, as shown in table 2. table 2. logic table cle ale ce we re wp *1 command input h l l h * data input l l l h h address input l h l h * serial data output l l l h * during programming (busy) * * * * * h during erasing (busy) * * * * * h program, erase inhibit * * * * * l standby * * h * * 0v/vcc h: v ih , l: v il , * : v ih or v il *1 : refer to application note (10) toward the end of this document. 16 512 i/o1 i/o8 8i/o 528 131072 pages 4096 blocks figure 2. schematic cell layout 32 pages 1 block
TC58NS512ADC 2003-03-05 22/43 table 3. command table (hex) first cycle second cycle acceptable while busy serial data input 80 read mode (1) 00 read mode (2) 01 read mode (3) 50 reset ff c auto program (true) 10 auto program (dummy) 11 auto program (multi block program) 15 auto block erase 60 d0 status read (1) 70 c status read (2) 71 c id read (1) 90 id read (2) 91 once the device has been set to read mode by a 00 h, 01h or 50h command, additional read commands are not needed for sequential page read operations. table 4 shows the operation states for read mode. table 4. read mode operation states cle ale ce we re i/o1 to i/o8 power output select l l l h l output active output deselect l l l h h high impedance active standby l l h h * high impedance standby h: v ih , l: v il , * : v ih or v il 0 0 0 0 0 0 0 i/o8 7 6 5 4 3 2 i/o1 serial data input: 80h (example) hex data bit assignment 1
TC58NS512ADC 2003-03-05 23/43 device operation read mode (1) read mode (1) is set when a ?00h? command is issued to the command register. refer to figure 3 below for timing details and the block diagram. read mode (2) by / ry we cle re m n start-address input 00h ce ale i/o cell array select page n m figure 3. read mode (1) operation 527 a data transfer operation from the cell array to the registe r starts on the rising edge of we in the fourth cycle (after the address information has been latched). the device will be in busy state during this transfer period. the ce signal must stay low after the fourth address input and during busy state. after the transfer period the device returns to ready state. serial data can be output synchronously with the re clock from the start pointer designated in the address input cycle. busy by / ry we cle re m n start-address input 01h ce ale i/o cell array select page n m figure 4. read mode (2) operation 527 the operation of the device after input of the 01h command is the same as that of read mode (1). if the start pointer is to be set after column address 256, use read mode (2). however, for a sequential read, output of the next page starts from column address 0. busy 256
TC58NS512ADC 2003-03-05 24/43 read mode (3) read mode (3) has the same timing as read modes (1) an d (2) but is used to access information in the extra 16-byte redundancy area of the page. the start pointer is ther efore set to a value between byte 512 and byte 527. sequential read (1) (2) (3) this mode allows the sequential reading of pages without additional address input. sequential read modes (1) and (2) ou tput the contents of addresses 0 to 527 as shown above, while sequential read mode (3) outputs the contents of the redundant address locations only. when the page address reaches the next block address, read command (00h/01h/50h ) and address inputs are needed. by / ry we cle re 50h ce ale i/o figure 5. read mode (3) operation 527 addresses bits a0 to a3 are used to set the start pointer for the redundant memory cells, while a4 to a7 are ignored. once a ?50h? command has been issued, the pointer moves to the redundant cell locations and only those 16 cells can be addressed, regardless of the value of the a4-to-a7 address. (a ?00h? command is necessary to move the pointer back to the 0-to-511 main memory cell location.) 512 a0 to a3 busy 00h busy 01h busy busy address input t r data output 50h a sequential read (1) (00h) 0 527 a sequential read (3) (50h) 512 527 data output t r t r a sequential read (2) (01h) 527 256 by / ry
TC58NS512ADC 2003-03-05 25/43 status read the device has three status read commands. there ar e status read (1) command ?70h? and status read (2) command ?71h?. the device automatically implements the execution and verification of the program and erase operations. the status read function is used to monitor the ready/busy status of the device, determine the result (pass/fail) of a program or erase operation, and determine whether the device is in protect mode. the device status is output via the i/o port on the re clock after a status read command ?70h? or ?71h? input. the resulting information of status read (1) command ?70h? is outlined in table 5 below and the resulting information of status read (2) command ?71h? are out lined in the explanation for multi block program and multi block erase toward the end of this document. table 5. status output table for status read (1) command ?70h? status output i/o1 pass/fail pass: 0 fail: 1 i/o2 not used 0 i/o3 not used 0 i/o4 not used 0 i/o5 not used 0 i/o6 not used 0 i/o7 ready/busy ready: 1 busy: 0 i/o8 write protect protect: 0 not protected: 1 the pass/fail status on i/o1 is only valid when the device is in the ready state. an application example with multiple devices is shown in figure 6. system design note: if the by / ry pin signals from multiple devices are wired together as shown in the diagram, the status read function can be used to determine the status of each individual device. device 1 cle 1 ce device 2 2 ce device 3 3 ce device n n ce device n 1 1 n ce ale we re i/o1 to i/o8 by / ry we re status on device 1 70h 1 ce ale i/o 70h status on device n by / ry cle n ce figure 6. status read timing application example busy
TC58NS512ADC 2003-03-05 26/43 auto page program the device carries out an automatic page program oper ation when it receives a ?10h? program command after the address and data have been input. the sequence of command, address and data input is shown below. (refer to the detailed timing chart.) auto block erase the auto block erase operation starts on the rising edge of we after the erase start command ?d0h? which follows the erase setup command ?80h?. this two-cycle process for erase operations acts as an ertra layer of protection from aceidental erasure of data due to external noise. the device automatically executes the erase and verify operations. pass 80 10 data input 0 to 527 70 i/o address input data input command program command status read command fail by / ry by / ry automatically returns to ready after completion of the operation. figure 7. auto page program operation the data is transferred (programmed) from the register to the selected page on the rising edge of we following input of the ?10h? command. a fter programming, the programmed data is transferred back to the register to be automatically verified by the device. if the programming does not succeed, the program/verify operation is repeated by the device until success is achieved or until the maximum loop number set in the device is reached. data input selected page reading & verification program pass i/o fail by / ry 60 d0 70 block address input: 3 cycles status read command busy erase start command
TC58NS512ADC 2003-03-05 27/43 multi block program the device carries out an multi block program operation when it receives a ?15h? or ?10h? program command after some sets of the address and data have been input. in the interval of the multi district adress and the (512 16 byte) data input, ?11h? dummy program command is used when it still continues the data input into another district. the sequence of command, address and data input is shown below. (refer to the detailed timing chart.) after ?15h? multi block program command, ph ysical programing starts as follows. (district 0) data input 11 80 80 11 15 80 80 11 (district 1) (district 2) (district 3) by / ry data input command data input 0 to 527 11 80 80 11 15 80 80 11 data input command address input data input 0 to 527 dummy program command data input command data input 0 to 527 data input command data input 0 to 527 address input dummy program command address input dummy program command address input multi block program command the data is transferred (programmed) from the register to the selected page on the rising edge of -we following input of the ?15h? command. after programming, the programmed data is transferred back to the register to be automatically verified by the device. if the programming does not succeed, the program/verify operation is repeated by the device until success is achieved or until the maximum loop number set in the device is reached. selected page reading & verification program
TC58NS512ADC 2003-03-05 28/43 starting the above operation from 1st page of the selected erase blocks, and then repeating the operation total 31 times with incrementing the page address in the b locks, and then input the last page data of the blocks, ?10h? command executes final programming. in this full sequence, the command sequence is following. after the ?10h? command, the total results of the above operation is shown through the status read command. the status discription of 71h command is following. status output i/o1 total pass/fail pass: 0 fail: 1 i/o2 district 0 pass/fail pass: 0 fail: 1 i/o3 district 1 pass/fail pass: 0 fail: 1 i/o4 district 2 pass/fail pass: 0 fail: 1 i/o5 district 3 pass/fail pass: 0 fail: 1 i/o6 not used do not care i/o7 ready/busy ready: 1 busy: 0 i/o8 write protect protect: 0 not protect: 1 i/o1 describes total pass/fail condition. if at least one fail occurred in 32 times u 4 (512 16 byte) page write operation, it shows ?fail? condition. i/o2 describes pass/fail condition. if more than one fail occurred in 32 times (512 16 byte) page write operation in district 0 area, it shows ?fail? condition. i/o3, i/o4 and i/o5 are as same manner as i/o2. 10 71 pass i/o status read command fail by / ry 15 15 80 15 10 80 80 80 11 11 11 11 80 80 80 80 11 11 11 11 80 80 80 80 11 11 11 11 80 80 80 80 1st 31st 32nd
TC58NS512ADC 2003-03-05 29/43 internal addressing in relation with the districts to use multi block program operation, the internal addressing should be conscious in relation with the district. x the device consists of 4 districts. x each district consists from 1024 erase blocks. x the allocation rule is follows. district 0: block 0, block 4, block 8, block 12, .., block 4092 district 1: block 1, block 5, block 9, block 13, .., block 4093 district 2: block 2, block 6, block 10, block 14, .., block 4094 district 3: block 3, block 7, block 11, block 15, .., block 4095 address input restriction for the multi block program operation in selecting the blocks for the multi block program operation, following is the restriction and acceptance. (restriction) maximum one block should be selected from each district. the data input operation should be started from the same number page of the each selected block and then, the page number in the blocks should be same number at the same time programming. (acceptance) there is no order limitation of the district for the address input. any number of the district can be select for the programming. so, for example, following operations are in acceptance. example 1 : (80) [district 2] (11) (80) [district 0] (11) (80) [district 1] (15) example 2 : (80) [district 0] (11) (80) [district 1] (1 1) (80) [district 2] (11) (80) [district 3] (15) it requires no mutual addres s relation between the selected blocks from each district. operating restriction during the multi block program operation (restriction) starting from 1st page data input, until issuing ?10h? command, any other command out of defined sequence can not be issued except status read command and reset command. (acceptance) the data input operation can be terminated with ?10h? command instead of ?15h? command in the middle of the page number in the block. in this case the status represents the reflected value accumulated from 1st page programming of this sequence and up to the last page programming terminated by ?10h? command. status read operation untill the ready condition after the programming terminated by ?10h? command, effective bit in the status data is limited on ready/busy bit. in other words, pass/fail condition can be checked only in the ready condition after ?10h? command.
TC58NS512ADC 2003-03-05 30/43 multi block erase the device carries out a multi block erase operation when it receives a ?d0h? command after some sets of the address have been input. after the ?d0h? command, the total results of erase oper ation is shown through the status read (2) command ?71h?. the status discription of 71h command is following. status output i/o1 total pass/fail pass: 0 fail: 1 i/o2 district 0 pass/fail pass: 0 fail: 1 i/o3 district 1 pass/fail pass: 0 fail: 1 i/o4 district 2 pass/fail pass: 0 fail: 1 i/o5 district 3 pass/fail pass: 0 fail: 1 i/o6 not used do not care i/o7 ready/busy ready: 1 busy: 0 i/o8 write protect protect: 0 not protect: 1 i/o1 describes total pass/fail condition. if at least one fail occurred in max 4 blocks erase operation, it shows ?fail? condition. i/o2 describes pass/fail condition. if fail occurred in district 0 area, it shows ?fail? condition. i/o3, i/o4 and i/o5 are as same manner as i/o2. internal addressing in relation with the districts to use multi block erase operation, the internal addressing sh ould be conscious in rela tion with the districts. x the device consists of 4 districts. x each district consists from 1024 erase blocks. x the allocation rule is follows. district 0: block 0, block 4, block 8, block 12, .., block 4092 district 1: block 1, block 5, block 9, block 13, .., block 4093 district 2: block 2, block 6, block 10, block 14, .., block 4094 district 3: block 3, block 7, block 11, block 15, .., block 4095 address input restriction for the multi block erase operation in selecting the blocks for the multi block erase operation, following is the restriction and acceptance. (restriction) maximum one block should be selected from each district. (acceptance) there is no order limitation of the district for the address input. any number of the districts can be select for the erase operation. so, for example, following operation are in acceptance. example 1 : (60) [district 2] (60) [dis trict 0] (60) [district 1] (d0) example 2 : (60) [district 0] (60) [district 1] (60) [district 2] (60) [district 3] (d0) it requires no mutual addres s relation between the selected blocks from each district. d0 71 pass i/o status read command fail by / ry
TC58NS512ADC 2003-03-05 31/43 reset the reset mode stops all operations. for example, in the case of a program or erase operation the internally generated voltage is discharged to 0 volts and the device enters wait state. the response to an ?ffh? reset command input during the various device operations is as follows: when a reset (ffh) command is input during programming when a reset (ffh) command is input during erasing when a reset (ffh) command is input during read operation when a status read command (70h) is input after a reset when two or more reset commands are input in succession figure 12. by / ry ff ff (3) (2) (1) the second command is invalid, but the third command is valid. ff ff ff internal v pp 80 10 ff 00 by / ry t rst (max 10 p s) figure 8. internal erase voltage d0 ff 00 by / ry t rst (max 500 p s) figure 9. 00 ff 00 by / ry t rst (max 6 p s) figure 10. figure 11. ff 70 by / ry i/o status: pass/fail o pass ready/busy o ready ff 70 by / ry i/o status: ready/busy o busy
TC58NS512ADC 2003-03-05 32/43 id read (1) the device contains id codes which identify the device type and the manufacturer. the device has 2 types of id read command, i.e. id read (1) command 90h and id read (2) command 91h. id read (1) command 90h provides maker code and de vice code. the id codes can be read out under the following timing conditions: table 6. id codes read out by id read command (1) 90h i/o8 i/o7 i/o6 i/o5 i/o4 i/o3 i/o2 i/o1 hex data maker code 1 0 0 1 1 0 0 0 98h device code 0 1 1 1 0 1 1 0 76h option code (1) 1 0 1 0 0 1 0 1 a5h * option code (2) 1 1 0 0 0 0 0 0 c0h ** * the a5h for the 3 rd byte of id read means the existence of 128 bit unique id number in the device. ** the c0h for the 4 th byte of id read means the existence of id read (2) function. how to read out unique id number the 128 bit unique id number is embedded in the device. the procedure to read out the id number is available using special command which is provided under a non-disclosure agreement. we cle re t cea ce ale i/o t alea t reaid id read command (1) address 00 maker code figure 13. id read timing device code for the specifications of the access times t reaid , t cr and t ar1 refer to the ac characteristics. option code (1) 98h 90h 00 76h a5h c0h option code (2)
TC58NS512ADC 2003-03-05 33/43 id read (2) id read (2) command 91h provides u 4-block mode availability. if id code read out by 91h is b0h, it indicates the device has u 4-block mode. table 7. id codes read out by command 91h i/o8 i/o7 i/o6 i/o5 i/o4 i/o3 i/o2 i/o1 hex data extended id code 0 0 1 0 0 0 0 0 20h figure 14. id read timing we cle re t cea ce ale i/o t alea t reaid id read command (2) address 00 extended id code 91h 00 20h for the specifications of the access times t reaid , t cea and t alea refer to the ac characteristics.
TC58NS512ADC 2003-03-05 34/43 application notes and comments (1) power-on/off sequence: the wp signal is useful for protecting against data corruption at power-on/off. the following timing sequence is necessary. the wp signal may be negated any time after the v cc reaches 2.5 v and ce signal is kept high in power up sequence. in order to operate this device stably, after v cc becomes 2.8 v, it recommends starting access after about 200 p s. (2) status after power-on the following sequence is necessary because some input signals may not be stable at power-on. (3) prohibition of unspecified commands the operation commands are listed in table 3. input of a command other than those specified in table 3 is prohibited. stored data may be corrupted if an unknown command is entered during the command cycle. (4) restriction of command while busy state during busy state, do not input any command except 70h, 71h and ffh. (5) acceptable commands after serial input command ?80h? once the serial input command ?80h? has been input, do not input any command other than the program execution command ?10h?, ?11h? or ?15h? or the reset command ?ffh?. if a command other than ?10h?, ?11h?, ?15h? or ?ffh? is input, the program operation is not performed. figure 15. power-on/off sequence v il operation 0 v v cc 3.0 v 2.8 v v il don?t care don?t care v ih ce , we , re cle, ale wp ff reset power on figure 16. command other than ?10h?, ?11h?, ?15h? or ?ffh? 80 programming cannot be executed. for this operation the ?ffh? command is needed. 10 xx
TC58NS512ADC 2003-03-05 35/43 (6) addressing for program operation within a block, the pages must be programmed consecutively from the lsb (least significant bit) page of the block to msb (most significant bit) page of the block. random page address programming is prohibited. (7) status read during a read operation the device status can be read out by inputt ing the status read command ?70h? in read mode. once the device has been set to status read mode by a ?70h? command, the device will not return to read mode. therefore, a status read during a read operation is prohibited. however, when the read command ?00h? is input during [a], status mode is reset and the device returns to read mode. in this case, data output starts automa tically from address n and address input is unnecessary data in: data (1) page 0 data register page 2 page 1 page 15 page 31 (1) (2) (3) (16) (32) data (32) from the lsb page to msb page data in: data (1) page 0 data register page 2 page 1 page 15 page 31 (2) (16) (3) (1) (32) data (32) ex.) random page program (prohibition) figure 17. page programming within a block 00 address n command ce we by / ry re [a] status read command input status read status output figure 18. 70 00
TC58NS512ADC 2003-03-05 36/43 (8) pointer control for ?00h?, ?01h? and ?50h? the device has three read modes which set the destination of the pointer. table 7 shows the destination of the pointer, and figure 14 is a b lock diagram of their operations. table 8. pointer destination read mode command pointer (1) 00h 0 to 255 (2) 01h 256 to 511 (3) 50h 512 to 527 the pointer is set to region a by the ?00h? command, to region b by the ?01h? command, and to region c by the ?50h? command. (example) the ?00h? command must be input to set the pointer back to region a when the pointer is pointing to region c. to program region c only, set the start point to region c using the 50h command. figure 19. pointer control pointer control (1) 00h (2) 01h (3) 50h 527 256 255 0 a c b 512 511 00h start point a area add 50h start point a area add start point c area add 50h add start point c area 00h start point c area add start point a area add 01h add start point b area start point a area add din 50h add programming region c only figure 20. example of how to set the pointer 01h add programming region b and c 80h 80h 10h 10h start point b area start point c area din
TC58NS512ADC 2003-03-05 37/43 (9) by / ry : termination for the ready/busy pin ( by / ry ) a pull-up resistor needs to be used for termination because the by / ry buffer consists of an open drain circuit. this data may vary from device to device. we recommend that you use this data as a reference when selecting a resistor value. v cc v cc device v ss r by / ry c l 1.5 p s 1.0 p s 0.5 p s 0 1 k : 4 k : 3 k : 2 k : 15 ns 10 ns 5 ns t f t r r t r t f v cc 3.3 v ta 25c c l 100 pf figure 21. t f ready 3.0 v v cc 1.0 v t r 3.0 v 1.0 v busy
TC58NS512ADC 2003-03-05 38/43 (10) note regarding the wp signal the erase and program operations are automatically reset when wp goes low. the operations are enabled and disabled as follows: enable programming disable programming enable erasing disable erasing wp t ww (100 ns min) 80 10 we by / ry din wp t ww (100 ns min) 60 d0 we by / ry din wp t ww (100 ns min) 80 10 we by / ry din wp t ww (100 ns min) 60 d0 we by / ry din
TC58NS512ADC 2003-03-05 39/43 (11) when five addre ss cycles are input although the device may read in a fifth address, it is ignored inside the chip. read operation program operation figure 22. cle address input 00h, 01h or 50h we internal read operation starts when we goes high in the fourth cycle. ce we ale i/o by / ry ignored figure 23. cle address input 80h ignored ce we ale i/o data input
TC58NS512ADC 2003-03-05 40/43 (12) several programming cycles on th e same page (partial page program) a page can be divided into up to 3 segments. each segment can be programmed individually as follows: (13) note regarding the re signal re the internal column address counter is incremented synchronously with the re clock in read mode. therefore, once the device has been set to read mode by a ?00h?, ?01h? or ?50h? command, the internal column address counter is incremented by the re clock independently of the address input timing, if the re clock input pulses start before the address input, and the pointer reaches the last column address, an internal read operation (array to register) will occur and the device will enter busy state. (refer to figure 25.) hence the re clock input must start after the address input. data pattern 3 data pattern 1 all 1s figure 24. 1st programming 2nd programming 3rd programming resul t data pattern 1 data pattern 3 data pattern 2 all 1s data pattern 2 all 1s note: the input data for unprogrammed or previously programmed page segments must be ?1? (i.e. the inputs for all page bytes outside the segment which is to be programmed should be set to all ?1?). all 1s figure 25. address input we i/o by / ry re 00h/01h/50h
TC58NS512ADC 2003-03-05 41/43 (14) invalid blocks (bad blocks) the device contains unusable blocks. therefore, the following issues must be recognized: referring to the block status area in the redundant area allows the system to detect bad blocks in the accordance with the physical data format issued by the ssfdc forum. detect the bad blocks by checking the block status area at the system power-on, and do not access the bad blocks in the following routine. the number of valid blocks at the time of shipment is as follows: (15) failure phenomena for program and erase operations the device may fail during a program or erase operation. the following possible failure modes should be considered when implementing a highly reliable system. failure mode detection and countermeasure sequence block erase failure status read after erase o block replacement page programming failure status read after program o block replacement (1) block verify after program o retry single bit programming failure 1 o 0 (2) ecc x ecc: error correction code x block replacement program erase when an error occurs in an erase operation, prevent futu re accesses to this bad block (again by creating a table within the system or by using another appropriate scheme). (16) chattering of connector there may be contact chattering when the device is inserted or removed from a connector. this chattering may cause damage to the data in the device. therefore, sufficient time must be allowed for contact bouncing to subside when a system is designed with smartmedia tm . (17) the device is formatted to comply with the phys ical and logical data form at of the ssfdc forum at the time of shipping. (18) do not turn off the power or remove the device from the socket before write/erase operation is complete. avoid using the device when the battery is low. power sh ortage, power failure and/or removal of the device from the socket before write/erase operation is complete will cause loss of data and/or damage to data. min typ. max unit valid (good) block number 4016 4096 block bad block bad block figure 26. when an error happens in block a, try to reprogram the data into another block (block b) by loading from an external buffer. then, prevent further system accesses to block a (by creating a bad block table or by using an another appropriate scheme). block a block b error occurs buffer memory figure 27.
TC58NS512ADC 2003-03-05 42/43 handling precaution (1) avoid bending or subjecting the card to sudden impact. (2) avoid touching the connectors so as to avoid damage from static electricity. this card should be kept in the antistatic film case when not in use. (3) toshiba cannot accept, and hereby disclaims liability for, any damage to the card including data corruption that may occur because of mishandling. how to read out unique id number the 128 bit unique id number is embedded in the device. the procedure to read out the id number is available using special command which is provided under a non-disclosure agreement. ssfdc forum the ssfdc forum is a voluntary organization intended to promote the smartmedia tm , a small removable nand flash memory card. the ssfdc forum standardized th e following specifications in order to keep the compatibility of smartmedia tm in systems. the latest specific ations issued by the forum must be referenced when a system is designed with smartmedia tm , especially with large capacity smartmedia tm . smartmedia tm electrical specifications smartmedia tm physical format specification smartmedia tm logical format specification some electrical specifications in this data sheet show differences from the forum?s electrical specification. complying with the forum?s electrical specification maintains compatibility with other smartmedias. please refer following ssfdc forum?s url to get the detailed information of each specification. url http://www.ssfdc.or.jp
TC58NS512ADC 2003-03-05 43/43 package dimensions weight: 1.8 g (typ.)

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